Home > News > Advance in Gallium Nitride Nanowires
July 29th, 2004
Advance in Gallium Nitride Nanowires
Abstract:
A significant breakthrough in the development of the highly prized semiconductor gallium nitride as a building block for nanotechnology has been achieved by a team of scientists with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California at Berkeley. For the first time ever, the researchers have been able control the direction in which a gallium nitride nanowire grows. Growth direction is critical to determining the wire's electrical and thermal conductivity and other important properties.
Source:
LBL
Bookmark:
| Related News Press |
Chip Technology
Diamond glitter: A play of colors with artificial DNA crystals May 17th, 2024
Oscillating paramagnetic Meissner effect and Berezinskii-Kosterlitz-Thouless transition in cuprate superconductor May 17th, 2024
Discovery points path to flash-like memory for storing qubits: Rice find could hasten development of nonvolatile quantum memory April 5th, 2024
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Discoveries
Diamond glitter: A play of colors with artificial DNA crystals May 17th, 2024
Finding quantum order in chaos May 17th, 2024
Advances in priming B cell immunity against HIV pave the way to future HIV vaccines, shows quartet of new studies May 17th, 2024
 |
||
 |
||
| The latest news from around the world, FREE | ||
 |
||
|
|
||
| Premium Products | ||
 |
||
|
Only the news you want to read!
Learn More |
||
 |
||
|
Full-service, expert consulting
Learn More |
||
|
|
||