Home > News > Room-temperature single-electron devices made easier
June 30th, 2003
Room-temperature single-electron devices made easier
Abstract:
Physicists at Cambridge University in the UK and the Japan Science & Technology Corporation in Tokyo have exploited a "natural" system of tunnel barriers in nanocrystalline silicon to make a single-electron transistor that operates at room temperature.
Source:
PhysicsWeb
Related News Press |
Nanoelectronics
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Key element for a scalable quantum computer: Physicists from Forschungszentrum Jülich and RWTH Aachen University demonstrate electron transport on a quantum chip September 23rd, 2022
Reduced power consumption in semiconductor devices September 23rd, 2022
Atomic level deposition to extend Moore’s law and beyond July 15th, 2022
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||