Home > News > Successful Development of New Next-Gen Non-Volatile Memory cell
December 28th, 2003
Successful Development of New Next-Gen Non-Volatile Memory cell
Abstract:
Asahi Glass Co., Ltd. and research group led by Koyanagi, professor of Graduate school of Engineering, Tohoku University, have succeeded in development of a new non-volatile memory, named Metal Nano Dot (MND) Memory. The MND memory is applied the deposition technology of MND film based on the synergy ceramic technologies possessed by Asahi Glass Co.
Source:
AGC
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