Home > News > Nanoimprint lithography gets smaller
July 28th, 2004
Nanoimprint lithography gets smaller
Abstract:
Researchers at Princeton University, US, have shown that photocurable nanoimprint lithography (P-NIL) can produce lines of polymer resist just 7 nm wide with a pitch (or pattern repeat) of only 14 nm. The technique also produced reliable results over the whole area of a 4 inch wafer. (more on earlier article)
Source:
Nanotechweb
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