Home > News > Samsung marches to 50 nm for DDR2
October 20th, 2006
Samsung marches to 50 nm for DDR2
Abstract:
Samsung Electronics has developed a 50-nanometer, 1-gigabit DDR2 DRAM chip based on three-dimensional transistor design and multilayered dielectric technology.
Source:
EETimes
Related News Press |
Memory Technology
Utilizing palladium for addressing contact issues of buried oxide thin film transistors April 5th, 2024
Interdisciplinary: Rice team tackles the future of semiconductors Multiferroics could be the key to ultralow-energy computing October 6th, 2023
Researchers discover materials exhibiting huge magnetoresistance June 9th, 2023
Announcements
Nanotechnology: Flexible biosensors with modular design November 8th, 2024
Exosomes: A potential biomarker and therapeutic target in diabetic cardiomyopathy November 8th, 2024
Turning up the signal November 8th, 2024
Nanofibrous metal oxide semiconductor for sensory face November 8th, 2024
The latest news from around the world, FREE | ||
Premium Products | ||
Only the news you want to read!
Learn More |
||
Full-service, expert consulting
Learn More |
||