Home > News > Nanotech Semiconductor touts breakthrough in CMOS TIA design
December 8th, 2007
Nanotech Semiconductor touts breakthrough in CMOS TIA design
Abstract:
Nanotech Semiconductor Limited, a fabless IC company specializing in advanced Analog & Mixed-Signal ICs for fiber-based communications applications, today announced what it claims is a breakthrough in CMOS transimpedance amplifier (TIA) design.
Nanotech's new family of 2.5-Gbit and 10-Gbit TIAs offers at least 3-4 dB more sensitivity at each data rate vs. the best existing devices, which are typically in expensive SiGe processes, say company representatives.
The NT25L55 offers ?33 dBm typically at 2.5 Gbits/sec, with a standard PIN diode, and with only 33-mA current consumption. The NT25L55 can therefore be used to replace APD-based devices in GPON networks, offering dramatic cost and power savings, contends Nanotech.
Source:
pennnet.com
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